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Numéro de référence | AON6520 | ||
Description | N-Channel MOSFET | ||
Fabricant | Alpha & Omega Semiconductors | ||
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1 Page
AON6520
30V N-Channel MOSFET
General Description
The AON6520 uses advanced trench technology to
provide excellent RDS(ON), low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
50A
< 8.5mΩ
< 11mΩ
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
50
29
140
11
9
35
31
31
12.5
1.9
1.2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
3.4
Max
30
64
4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Aug 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 6 | ||
Télécharger | [ AON6520 ] |
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