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PDF AON6850 Data sheet ( Hoja de datos )
| Número de pieza | AON6850 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6850
100V Dual N-Channel MOSFET
SDMOS TM
General Description
The AON6850 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
28A
< 35mΩ
< 42mΩ
DFN5X6 EP2
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
28
18
55
5
4
28
39
56
22
1.7
1.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
20
60
1.8
Max
24
72
2.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Feb 2010
www.aosmd.com
Page 1 of 1
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6850
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
TA=25°C
TA=100°C
60
50
10.0
TA=150°C
TA=125°C
40
30
20
10
1.0
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
40 1000
30
100
20
10
10
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
TA=25°C
17
5
2
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
1E-04 0.001 0.01 0.1 1 10 1000 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=72°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Feb 2010
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AON6850.PDF ] | |
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