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Alpha & Omega Semiconductors - N-Channel MOSFET

Numéro de référence AON6884
Description N-Channel MOSFET
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AON6884 fiche technique
AON6884
40V Dual N-Channel MOSFET
General Description
Product Summary
The AON6884 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This is an
all purpose device that is suitable for use in a wide range
of power conversion applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
40V
34A
< 11.3m
< 13.8m
DFN5X6 EP2
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
34
21
120
9
7
35
61
21
8
1.6
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
35
65
5
Max
45
80
6
D1 D2
G2
S1
S2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: November 2010
www.aosmd.com
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