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PDF AON6906A Data sheet ( Hoja de datos )
| Número de pieza | AON6906A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON6906A
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6906A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and board
space utilization.It includes two specialized MOSFETs in a dual
Power DFN5x6A package. The Q1 "High Side" MOSFET is
desgined to minimze switching losses. The Q2 "Low Side"
MOSFET is desgined for low RDS(ON) to reduce conduction
losses.Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.In addition,switching behavior
is well controlled with a "Schottky style" soft recovery body
diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
37A
<14.4mΩ
<21.3mΩ
Q2
30V
48A
<11.7mΩ
<17.5mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current
TC=25°C
TC=100°C
ID
37 48
23 30
Pulsed Drain Current C
IDM 85 100
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
9.1
7.2
21
22
10
8.1
23
26
TC=25°C
Power Dissipation B TC=100°C
PD
31
12.5
45
18
TA=25°C
Power Dissipation A TA=70°C
PDSM
1.9
1.2
2
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
27
51
2.3
Max Q1
35
67
4
Max Q2
32
61
2.8
Units
°C/W
°C/W
°C/W
Rev 0. Oct 2010
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6906A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
35
30
TA=25°C
TA=150°C
TA=100°C
TA=125°C
25
20
15
10
5
10.0
0.000001
0.00001
0.0001
Time in avalanche, tA (s)
0.001
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0 25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
40
35
30
25
20
15
10
5
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=67°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0: Oct 2010
www.aosmd.com
Page 5 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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| PDF Descargar | [ Datasheet AON6906A.PDF ] | |
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