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Alpha & Omega Semiconductors - N-Channel MOSFET

Numéro de référence AON6912A
Description N-Channel MOSFET
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AON6912A fiche technique
AON6912A
30V Dual Asymmetric N-Channel MOSFET
General Description
The AON6912A is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6912A is
well suited for use in compact DC/DC converter
applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
34A
<13.7m
<19.3m
Q2
30V
52A
<7.3m
<10.4m
Top View
DFN5X6
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20
34 52
21 33
85 130
10 13.8
8 10.8
22 28
24 80
22 30
9 12
1.9 2.1
1.2 1.3
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
4.5
Typ Q2
24
50
3.5
Max Q1
35
67
5.5
Max Q2
29
60
4.2
Units
°C/W
°C/W
°C/W
Rev1: Mar. 2011
www.aosmd.com
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