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PDF AON6918 Data sheet ( Hoja de datos )
| Número de pieza | AON6918 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON6918
25V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6918 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6918 is well
suited for use in compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
25V
60A
<5.2mΩ
<7.8mΩ
Q2
25V
85A
<1.8mΩ
<2.7mΩ
Top View
DFN5X6A
Bottom View
G2
S2
S2
S2
(S1/D2)
PIN1
D1
D1 G1
D1
D1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
25
±20
60 85
38 66
200 490
15 26.5
12 21
40 78
80 304
31 104
12.5
41.5
2 2.2
1.3 1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
25
50
3.1
Typ Q2
20
45
0.9
Max Q1
30
60
4
Max Q2
25
55
1.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0 : Aug 2011
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6918
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
70
60
50
40
30
20
10
0
0
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001
0.001
0.1
Pulse Width (s)
10 0
18
1000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Aug 2011
www.aosmd.com
Page 5 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6918.PDF ] | |
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