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PDF AON6922 Data sheet ( Hoja de datos )
| Número de pieza | AON6922 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6922
25V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6922 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6922 is
well suited for use in compact DC/DC converter
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
25V
71A
<3.8mΩ
<4.8mΩ
Q2
25V
85A
<1.4mΩ
<1.8mΩ
Top View
DFN5X6A
Bottom View
G2
S2
S2
S2
(S1/D2)
D1
D1 G1
D1
D1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±12
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
71 85
ID 44 66
IDM 240 420
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
18
14
40
80
31
25
78
304
TC=25°C
Power Dissipation B TC=100°C
31 104
PD
12.5
41.5
TA=25°C
Power Dissipation A TA=70°C
PDSM
2
1.3
2.2
1.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
25
50
3.1
Typ Q2
20
45
0.9
Max Q1
30
60
4
Max Q2
25
55
1.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: April 2011
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6922
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
TA=150°C
TA=125°C
40
30
20
10
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
150 1
0
0.00001
0.001 Pulse 0W.1idth (s) 1018
1000
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 1: April 2011
www.aosmd.com
Page 5 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6922.PDF ] | |
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