PDF AON6924 Data sheet ( Hoja de datos )

Número de pieza	AON6924
Descripción	N-Channel MOSFET
Fabricantes	Alpha & Omega Semiconductors
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No Preview Available ! AON6924 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary The AON6924 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 “ High Side” MOSFET and the Q2 “Low Side” MOSFET with integrated Schottky have been designed for optimal power efficiency.The AON6924 is well suited for use in compact DC/DC converter applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 60A <5.2mΩ <7.8mΩ Q2 30V 85A <1.6mΩ <1.9mΩ Top View DFN5X6A Bottom View G2 S2 S2 S2 (S1/D2) PIN1 D1 D1 G1 D1 D1 PHASE Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 ±20 ±12 60 85 38 66 200 510 15 28 12 22 40 68 80 231 31 104 12.5 41.5 2 2.2 1.3 1.4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 25 50 3.1 Typ Q2 20 45 0.9 Max Q1 30 60 4 Max Q2 25 55 1.2 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1: April 2011 www.aosmd.com Page 1 of 11 Free Datasheet http://www.datasheet4u.com/ 1 page AON6924 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 40 100 TA=25°C TA=150°C TA=100°C TA=125°C 30 20 10 10 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 0 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 70 60 50 40 30 20 10 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=60°C/W 10000 1000 100 10 TA=25°C 17 5 2 10 150 1 0.00001 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 0.01 0.001 0.00001 Single Pulse PD Ton T 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 100 1000 Rev 1 : April 2011 www.aosmd.com Page 5 of 11 Free Datasheet http://www.datasheet4u.com/ 5 Page AON6924 + VDC - Vgs Ig Gate Charge Test Circuit & Waveform + Vds VDC DUT - Vgs 10V Qgs Qg Qgd Vds Vgs Rg Resistive Switching Test Circuit & Waveforms RL Vds DUT + Vdd VDC - Charge 90% 10% Vgs Vgs td(on) tr ton td(off) tf toff Vds Id Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E= AR 1/2 LIAR Vds Vgs + Vdd VDC - Id DUT Vgs B VD S S I AR Vds + Vds - Isd Vgs Ig DUT L Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vgs + Vdd VDC - Isd Vds I F trr dI/dt I RM Vdd Rev 1 : April 2011 www.aosmd.com Page 11 of 11 Free Datasheet http://www.datasheet4u.com/ 11 Page

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