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Alpha & Omega Semiconductors - N-Channel MOSFET

Numéro de référence AON6936
Description N-Channel MOSFET
Fabricant Alpha & Omega Semiconductors 
Logo Alpha & Omega Semiconductors 





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AON6936 fiche technique
AON6936
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
32A
<4.9m
<8.4m
Q2
30V
44A
<2m
<2.8m
Top View
DFN5X6B
Bottom View
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20
32 44
25 34
128 176
22 40
18 32
32 50
26 63
36 36
31 83
12 33
3.6 4.3
2.3 2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
1.2
Max Q1
35
67
4
Max Q2
29
60
1.5
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : July 2012
www.aosmd.com
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