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PDF AON6973A Data sheet ( Hoja de datos )
| Número de pieza | AON6973A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6973A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
28A
<5.2mΩ
<9.5mΩ
Q2
30V
32A
<3.9mΩ
<6.4mΩ
Top View
DFN5X6B
Bottom View
Top View
Bottom View
PIN1
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
VDS Spike
100ns
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
PDSM
TJ, TSTG
30
±20 ±20
28 32
22 25
112 144
22 30
17 24
32 50
26 63
36 36
31 33
12 13
3.6 4.3
2.3 2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6973A
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 40
30 30
20 20
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
1000
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=67°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev 0 : Nov. 2012
www.aosmd.com
Page 5 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6973A.PDF ] | |
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