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Numéro de référence | AON6974A | ||
Description | N-Channel MOSFET | ||
Fabricant | Alpha & Omega Semiconductors | ||
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AON6974A
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Integrated Schottky Diode (SRFET) on Low-Side
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
28A
<5.2mΩ
<9.5mΩ
Q2
30V
32A
<3.3mΩ
<5.0mΩ
Top View
DFN5X6B
Bottom View
Top View
Bottom View
PIN1
PIN1
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
28 32
22 25
Pulsed Drain Current C
IDM 112 144
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
22
17
32
26
30
24
50
63
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
33
13
TA=25°C
Power Dissipation A TA=70°C
PDSM
3.6
2.3
4.3
2.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
3.3
Typ Q2
24
50
3
Max Q1
35
67
4
Max Q2
29
60
3.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Nov. 2012
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 10 | ||
Télécharger | [ AON6974A ] |
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