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PDF 2SD1005 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1005 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SD1005
TRANSISTOR (NPN)
FEATURES
z Small Flat Package
z High Breakdown Voltage
z Excellent DC Current Gain Linearity
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
*Pulse test
CLASSIFICATION OF hFE（1）
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
VBE(sat)*
VBE*
fT
Cob
Test conditions
IC=0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=100V,IE=0
VEB=5V,IC=0
VCE=2V, IC=100mA
VCE=2V, IC=500mA
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCE=10V, IC=10mA
VCE=5V,IC=10mA
VCB=10V, IE=0, f=1MHz
Min Typ Max Unit
100 V
80 V
5V
0.1 µA
0.1 µA
90 400
25
0.5 V
1.5 V
0.6 0.7 V
160 MHz
12 pF
RANK
RANGE
MARKING
W
90–180
BW
V
135–270
BV
U
200–400
BU
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD1005.PDF ] | |
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