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STP150N3LLH6 fiches techniques PDF

STMicroelectronics - N-channel MOSFET

Numéro de référence STP150N3LLH6
Description N-channel MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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STP150N3LLH6 fiche technique
STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD150N3LLH6
STP150N3LLH6
STu150N3LLH6
VDSS
30 V
30 V
30 V
RDS(on) max
0.0028
0.0033
0.0033
ID
80 A
80 A
80 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
High avalanche ruggedness
Low gate drive power losses
Application
Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$4!"OR
'
Table 1. Device summary
Order codes
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
Marking
150N3LLH6
150N3LLH6
150N3LLH6
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2009
Doc ID 15227 Rev 3
1/16
www.st.com
16
Free Datasheet http://www.datasheet4u.com/

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