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Número de pieza | P20N60 | |
Descripción | SGP20N60 | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P20N60 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! SGP20N60
SGW20N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP20N60
SGW20N60
VCE
600V
600V
IC VCE(sat)
Tj Marking Package
20A 2.4V 150°C G20N60 PG-TO-220-3-1
20A 2.4V 150°C G20N60 PG-TO-247-3
C
G
E
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 20 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Ts
Value
600
40
20
80
80
±20
115
Unit
V
A
V
mJ
10
179
-55...+150
260
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4 Nov 09
Free Datasheet http://www.datasheet4u.com/
1 page SGP20N60
SGW20N60
60A
50A
40A
VGE=20V
15V
13V
30A 11V
9V
7V
20A 5V
10A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
70A
60A Tj=+25°C
-55°C
50A +150°C
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
60A
50A
40A
VGE=20V
15V
13V
30A 11V
9V
7V
20A 5V
10A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
4.0V
3.5V
3.0V
IC = 40A
2.5V
2.0V
IC = 20A
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5 Rev. 2.4 Nov 09
Free Datasheet http://www.datasheet4u.com/
5 Page SGP20N60
SGW20N60
τr11
Tj (t)
p(t) r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
a nd Stray capacity Cσ =900pF.
11 Rev. 2.4 Nov 09
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet P20N60.PDF ] |
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