(PDF) JDV2S17S Datasheet

Número de pieza	JDV2S17S
Descripción	VCO
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • High Capacitance Ratio: C1V/C4V = 2.1 (typ.) • Low Series Resistance : rs = 0.6 Ω (typ.) • This device is suitable for use in a small-size tuner. Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C JDV2S17S Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Note: Signal level when capacitance is measured: Vsig = 100 mVrms Marking JEDEC ― JEITA ― TOSHIBA 1-1K1A Weight: 0.0011 g (typ.) Min Typ. Max Unit 10 ⎯ ⎯ V ⎯ ⎯ 3 nA 1.77 ⎯ 2.01 pF 0.8 ⎯ 1.0 2 ⎯ 2.2 ⎯ ⎯ 0.6 0.75 Ω Ｊ 1 2004-02-09 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF JDV2S17S Data sheet ( Hoja de datos )