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PDF TK100F06K3 Data sheet ( Hoja de datos )
| Número de pieza | TK100F06K3 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TK100F06K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TK100F06K3
Swiching Regulator, DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 4.0mΩ (typ.)
• High forward transfer admittance: |Yfs| = 174 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
• Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
(Note 4)
Storage temperature range (Note 4)
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
60
60
±20
100
300
180
81
100
18
175
−55 to 175
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
10.0 ± 0.3
9.5 ± 0.2
Unit: mm
0.4 ± 0.1
1.1
0.76 ± 0.1
1.4 ± 0.1
2.54 ± 0.25
2.35 ± 0.1
2.34 ± 0.25
123
0.4 ± 0.1
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
8.0
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-10W1A
Weight: 1.07 g (typ.)
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
0.83
Unit
°C/W
1
Note 1: Please use devices on condition that the channel temperature is below 175°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 11 μH, RG = 25 Ω, IAR = 100 A
3
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Note 4: 175°C refers to AEC-Q101.
Note 5:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution
1 2009-04-17
Free Datasheet http://www.datasheet4u.com/
1 page  
RDS (ON) − Tc
10
Common source
VGS = 10 V
Pulse Test
8
100 A
6
ID = 25,50 A
4
2
0
−80 −40
0
40 80 120 160 200
Case temperature Tc (°C)
TK100F06K3
IDR − VDS
1000
100
10
1
0.1
0
10
5
3 VGS = 0
1
Common source
Tc = 25°C
Pulse Test
−0.3
−0.6
−0.9
−1.2
−1.5
Drain-source voltage VDS (V)
100000
Capacitance – VDS
10000
Ciss
1000
Common source
VGS = 0 V
f =1MHz
100 Tc = 25°C
0.1
1
10
Drain-source voltage VDS (V)
Coss
Crss
100
Vth − Tc
5 Common source
VDS = 10 V
ID = 1mA
4 Pulse Test
3
2
1
0
−80 −40
0
40 80 120 160 200
Case temperature Tc (°C)
PD − Tc
250
200
150
100
50
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input / output
characteristics
80
Common source
70
ID = 100 A
Tc = 25°C
Pulse Test
60
24
50 VDS
12
40 VDD = 48V
16
14
12
10
8
30
VGS
20
6
4
10 2
00
0 20 40 60 80 100 120 140 160
Total gate charge Qg (nC)
5 2009-04-17
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TK100F06K3.PDF ] | |
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