Datasheet K40P144M100SF2V2-PDF.HTML Equivalent ( PDF )

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K40 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4003	N-Channel MOSFET, 2SK4003 2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications ６．５±０．２ Unit: mm １．５±０．２ z Low drain−source ON-resistance z Low leakage current z Enhancement mode : RDS (ON) = 1.7	Toshiba Semiconductor	data
2	K4004-01MR	Power MOSFET, Transistor This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of	Fuji	mosfet
3	K4005-01MR	N-Channel MOSFET, 2SK4005-01MR This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of	Fuji Electric	data
4	K401	Photocoupler Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K4	KODENSHI KOREA CORP	data
5	K4012	N-Channel MOSFET, 2SK4012 2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 8.5 S (typ.) z Low leakage current	Toshiba Semiconductor	data
6	K4013	N-Channel MOSFET, 2SK4013 2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: \|Yfs\| = 5.0 S (typ.) Low leakage current: IDSS =	Toshiba Semiconductor	data
7	K4017	N-Channel MOSFET, 2SK4017 2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: \|Yfs\| = 6.0	Toshiba Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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