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IGW30N60T fiches techniques PDF

Infineon - IGBT

Numéro de référence IGW30N60T
Description IGBT
Fabricant Infineon 
Logo Infineon 





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IGW30N60T fiche technique
IGW30N60T
TRENCHSTOPSeries
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Frequency Converters
- Uninterruptible Power Supply
TRENCHSTOPand Fieldstop technology for 600V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO247-3
Type
IGW30N60T
VCE
600V
IC
30A
VCE(sat),Tj=25°C Tj,max
1.5V
175C
Marking Code
G30T60
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
45
39
90
90
20
5
187
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.8 19.05.2015

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