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PDF H4435S Data sheet ( Hoja de datos )
| Número de pieza | H4435S | |
| Descripción | P-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 1/5
H4435S
P-Channel Enhancement-Mode MOSFET (-30V, -9.1A)
• 8-Lead Plastic SO-8
Package Code: S
Features
• RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
• RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
H4435S Symbol & Pin Assignment
54
6 3 Pin 1 / 2 / 3: Source
Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current (Continuous)
IDM Drain Current (Pulsed) *1
PD Total Power Dissipation @TA=25oC
Tj, Tstg
RθJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
-30
±20
-9.1
-50
2.5
-55 to +150
50
Units
V
V
A
A
W
°C
°C/W
H4435S
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
1 page  
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
Ramp-up
tP
TL
Tsmax
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Peak temperature
245oC ±5oC
260oC +0/-5oC
H4435S
Spec. No. : MOS200101)
Issued Date : 2008.01.12
Revised Date :2009.02.06
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HSMC Product Specification
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet H4435S.PDF ] | |
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