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30KP51S fiches techniques PDF

LGE - Glass passivated junction chip

Numéro de référence 30KP51S
Description Glass passivated junction chip
Fabricant LGE 
Logo LGE 





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30KP51S fiche technique
30KP33S,SC SERIES
30K Watts TVS Diodes
VR : 33 - 400 Volts
PPK : 30,000 Watts
Features
— Glass passivated junction chip
— Excellent Clamping Capability
— Fast Response Time
— Low Leakage Current
— Pb / RoHS Free
Mechanical Data
— Case : molded plastic
— Epoxy : UL94V-O rate flame retardant
— Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
— Polarity : Color band denotes cathode end
— Mounting position : Any
— Weight : 1.40 grams (approximate)
DO-204AR
0.251 (6.40)
0.244 (6.20)
0.051 (1.30)
0.047 (1.20)
1.00 (25.4)
MIN.
0.368 (9.35)
0.364 (9.25)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS (Ta = 25 °C)
Rating
Peak Pulse Power Dissipation (10 x 1000μs, see Fig.1 )
Steady State Power Dissipation
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
(Uni-directional devices only)
Operating and Storage Temperature Range
Symbol
PPK
PD
IFSM
TJ, TSTG
Fig. 1 - Pulse Wave Form
tr
100 Peak Value - IPP
Test Waveform
Paramiters
tr = 10 μs
tp = 1000 μs
Half Value - IPP
2
50
10x1000 μs Waveform
tp
0
0
1
2
T, TIME(ms)
3
Value
30,000
7
250
- 65 to + 150
Unit
W
W
A
°C
http://www.luguang.cn
Free Datasheet http://www.datasheet4u.com/

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