DataSheetWiki


UT12N10 fiches techniques PDF

Unisonic Technologies - N-CHANNEL POWER MOSFET

Numéro de référence UT12N10
Description N-CHANNEL POWER MOSFET
Fabricant Unisonic Technologies 
Logo Unisonic Technologies 





1 Page

No Preview Available !





UT12N10 fiche technique
UNISONIC TECHNOLOGIES CO., LTD
UT12N10
Preliminary
12 Amps, 100 Volts
N-CHANNEL POWER MOSFET
„ DESCRIPTION
The UTC UT12N10 is an N-channel mode Power FET using
UTC’s advanced technology to provide custumers with minimum
on-state resistance by extremely high dense cell design. Moreover,
it‘ s good at handing high power and current.
„ FEATURES
* 100V, 12A, RDS(ON) = 180m@VGS = 10V.
* Be good at handing high power and current.
* Very high dense cell design for super low RDS(ON).
* Lead free product is acquired.
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT12N10L-TN3-R
UT12N10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
Package
TO-252
S: Source
Pin Assignment
1 23
G DS
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-508.b
Free Datasheet http://www.datasheet4u.com/

PagesPages 4
Télécharger [ UT12N10 ]


Fiche technique recommandé

No Description détaillée Fabricant
UT12N10 N-CHANNEL POWER MOSFET Unisonic Technologies
Unisonic Technologies

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche