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PDF IXA45IF1200HB Data sheet ( Hoja de datos )
| Número de pieza | IXA45IF1200HB | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
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IXA45IF1200HB
XPT IGBT
Copack
I C25 =
VCES
=
V =CE(sat)typ
78 A
1200 V
1.8 V
Part number
IXA45IF1200HB
C (2)
(G) 1
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (3)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
Package:
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
IGBT
Symbol
VCES
VGES
IC25
I C100
Ptot
I CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I GES
VCE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
VGE(th)
Q Gon
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
SCSOA
t SC
I SC
RthJC
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
Short circuit safe operation area
Short circuit duration
Short circuit current
Thermal resistance juntion to case
Conditions
VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TC = 25°C
TC = 100°C
VCE = VCES ; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TVJ = 125 °C
VCE = 0 V; VGE = ±20 V
IC = 35 A; VGE = 15 V
IC = 1.5 mA; VGE = VCE
TVJ = 25°C
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC = 35 A
Inductive load
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG= 27 Ω
VGE = 15 V; RG = 27 Ω
VCEK = 1200 V
TVJ = 125 °C
TVJ = 125°C
Ratings
min. typ. max.
1200
±20
78
45
325
0.1
0.1
500
1.8 2.1
2.1
5.4 6 6.5
106
70
40
250
100
3.8
4.1
105
Unit
V
V
A
A
W
mA
mA
nA
V
V
V
nC
ns
ns
ns
ns
mJ
mJ
A
VCE = 900 V; VGE= ±15 V
RG = 27 Ω ; non-repetitive
TVJ = 125°C
10 µs
140 A
0.38 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100702b
Free Datasheet http://www.datasheet4u.com/
1 page  
IXA45IF1200HB
70 VGE = 15 V
60
50
IC 40
[A] 30
20
TVJ = 25°C
TVJ = 125°C
10
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
70
60
50
IC 40
[A] 30
20
10
0
5
TVJ = 125°C
TVJ = 25°C
6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
10
8
6
E
RG = 27
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
Eon
Eoff
[mJ] 4
2
0
0 20 40 60 80
IC [A]
Fig. 5 Typ. switching energy vs. collector current
70
13 V
VGE = 15 V
60
17 V
19 V
11 V
50
IC 40 TVJ = 125°C
[A] 30
20
9V
10
0
01234
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 35 A
VCE = 600 V
15
5
VGE 10
[V]
5
0
0 20 40 60 80 100 120 140
QG [nC]
Fig. 4 Typ. turn-on gate charge
6
IC = 35 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
5
E
Eon
[mJ]
4
Eoff
3
20 40 60 80
RG [ ]
Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100702b
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXA45IF1200HB.PDF ] | |
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