MX043G Datasheet PDF - Microsemi
| Part Number | MX043G | |
| Description | RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Manufacturers | Microsemi | |
| Logo |  |
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There is a preview and MX043G download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
• Harris FSC260R die
• total dose: 100 kRAD(Si) within pre-radiation parameter limits
• dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
• dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤IDM typical
• neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
• photocurrent: 17 nA/RAD(Si)/sec typical
• rated Safe Operating Area Curve for Single event Effects
• rugged polysilicon gate cell structure with ultrafast body diode
• low inductance surface mount power package available with “J-leads”
(MX043J) or “gullwing-leads” (MX043G)
• very low thermal resistance
• reverse polarity available upon request add suffix “R”st
Maximum Ratings @ 25°C (unless otherwise
sDpEeScCiRfiIePdT)ION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Weight
MX043J
MX043G
200 Volts
44 Amps
50 mΩ
RADIATION
HARDENED
SEGR-RESISTANT
N-CHANNEL
ENHANCEMENT
MODE
POWER MOSFET
SYMBOL
BVDSS
BVDGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
PD
Tj
Tstg
IS
IS M
θJC
-
MAX.
200
200
+/-20
+/-30
44
28
132
44
tbd
tbd
300
-55 to +125
-55 to +125
44
132
0.25
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
grams
SINGLE EVENT Ion Species typical LET (MeV/mg/cm)
EFFECTS
Ni
26
SAFE
Br
37
OPERATING
Br
37
AREA
Br
37
Notes
(SEESOA)
Br
37
(1) Pulse test, t ≤ 300 µ s, duty cycle δ≤ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857
typical range (µ)
43
36
36
36
36
VGS
-20V
-5V
-10V
-15V
-20V
VDSmax
200V
200V
160V
100V
40V
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MX043G electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ MX043G.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| MX043 | The function is RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Microsemi | |
| MX043G | The function is RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Microsemi | |
| MX043J | The function is RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Microsemi | |
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