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PDF MUR1005CT Data sheet ( Hoja de datos )
| Número de pieza | MUR1005CT | |
| Descripción | (MUR1005 - MUR1060) 10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR1005CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MUR1005 thru MUR1060
®
MUR1005 thru MUR1060
Pb
Pb Free Plating Product
10.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
¬ Case:TO-220AB Heatsink Package
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.24 grams
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "N"
Doubler Reverse Doubler
Suffix "D"
Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
COMMON CATHODE POLARITY
SUFFIX "CT"
MUR1005CT MUR1010CT MUR1020CT MUR1030CT MUR1040CT MUR1060CT
COMMON ANODE POLARITY
DOUBLER POLARITY
REVERSE POLARITY
SUFFIX "N"
SUFFIX "D"
SUFFIX "E"
SYMBOL MUR1005N
MUR1005D
MUR1005E
MUR1010N
MUR1010D
MUR1010E
MUR1020N
MUR1020D
MUR1020E
MUR1030N
MUR1030D
MUR1030E
MUR1040N MUR1060N
MUR1040D MUR1060D
MUR1040E MUR1060E
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
50
100 200 300 400 600 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
10.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
100 A
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
0.98 1.3
10.0
250
35
65
2.2
-55 to +150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet MUR1005CT.PDF ] | |
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