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PDF HF220-28 Data sheet ( Hoja de datos )
| Número de pieza | HF220-28 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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HF220-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF220-28 is Designed for
FEATURES:
• PG = 12 dB min. at 220 W/30 MHz
• IMD3 = -30 dBc max. at 220 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 16 A
VCBO
70 V
VCEO
35 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
320 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.7 OC/W
PACKAGE STYLE .500 4L FLG
.112x45°
A
FULL R
E
L
C
Ø.125 NOM.
C
B
B
E
E
H
DF
G
K
IJ
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .220 / 5.59
.230 / 5.84
B .125 / 3.18
C .245 / 6.22
.255 / 6.48
D .720 / 18.28
.7.30 / 18.54
E .125 / 3.18
F .970 / 24.64
.980 / 24.89
G .495 / 12.57
H .003 / 0.08
.505 / 12.83
.007 / 0.18
I .090 / 2.29
.110 / 2.79
J .150 / 3.81
.175 / 4.45
K .280 / 7.11
L .980 / 24.89
1.050 / 26.67
ORDER CODE: ASI10609
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 100 mA
BVEBO
IE = 20 mA
ICEO
VCE = 30 V
ICES VCE = 35 V
hFE VCE = 5.0 V
IC = 7.0 A
MINIMUM TYPICAL MAXIMUM
35
70
4.0
5.0
5.0
15 50
UNITS
V
V
V
mA
mA
---
COB VCB = 28 V
f = 1.0 MHz
---
450
---
pF
GP
IMD3
ηC
Load
Mismatch
VCE = 28 V
VCE = 28 V
ICQ = 750 mA
ICQ = 750 mA
POUT = 220 W
POUT = 220 W
12
40
---
dB
--- -30 dBc
%
:1 --- VSWR
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HF220-28.PDF ] | |
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