(PDF) MJ8501 Datasheet - Silicon NPN Power Transistor

Número de pieza	MJ8501
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 5A IBB Base Current-Continuous 2A IBM Base Current-Peak 4A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc Product Specification MJ8501 isc Website：www.iscsemi.cn Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF MJ8501 Data sheet ( Hoja de datos )