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Freescale - P-Channel 20-V (D-S) MOSFET

Numéro de référence AO3415
Description P-Channel 20-V (D-S) MOSFET
Fabricant Freescale 
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AO3415 fiche technique
FArneeaslocgalPeower
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SOT-23 Surface Mount Package
Saves Board Space
Fast switching speed
High performance trench technology
AO3415A/MM2C3324175PA
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
0.052 @ VGS = -4.5V
-20 0.072 @ VGS = -2.5V
0.120 @ VGS = -1.8V
ID (A)
-3.6
-3.1
-2.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
-20
±8
-3.6
-1.8
-10
±0.46
V
A
A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
1.25
0.8
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
R THJA
Maximum
100
150
Units
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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