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PDF IKW15N120T2 Data sheet ( Hoja de datos )
| Número de pieza | IKW15N120T2 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IKW15N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® 2nd generation for 1200 V applications offers :
G
E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15N120T2 1200V 15A
1.75V
175C K15T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current (Tj = 150°C)
TC = 25C
TC = 110C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 175C
Diode forward current (Tj = 150°C)
TC = 25C
TC = 110C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Wavesoldering only, temperature on leads only
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
30
15
60
60
25
15
60
20
10
235
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2 12.06.2013
1 page  
IKW15N120T2
TrenchStop® 2nd generation Series
60A
40A
TC=80°C
T =110°C
C
20A Ic
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 41.8)
tp=3µs
10A 10µs
50µs
150µs
1A
500µs
20ms
DC
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=15V)
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Maximum power dissipation as a
function of case temperature
(Tj 175C)
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Maximum DC Collector current as
a function of case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
5
Rev. 2.2 12.06.2013
5 Page 
IKW15N120T2
TrenchStop® 2nd generation Series
600ns
500ns
400ns
300ns
200ns
100ns
TJ=175°C
TJ=25°C
0ns
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
3µC TJ=175°C
2µC
1µC TJ=25°C
0µC
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
TJ=175°C
20A
15A
TJ=25°C
10A
5A
0A
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
-600A/µs
TJ=25°C
-500A/µs
-400A/µs
-300A/µs
TJ=175°C
-200A/µs
-100A/µs
-0A/µs
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
11
Rev. 2.2 12.06.2013
11 Page | ||
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| PDF Descargar | [ Datasheet IKW15N120T2.PDF ] | |
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