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Datasheet K4106-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K41 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K4100LS | N-Channel MOSFET, 2SK4100LS
Ordering number : ENA0778
2SK4100LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4100LS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability H  Sanyo Semicon Device data | | |
| 2 | K4101LS | N-Channel MOSFET, 2SK4101LS
Ordering number : ENA0745
2SK4101LS
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK4101LS
Features
• • • •
General-Purpose Switching Device Applications
Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of  Sanyo data | | |
| 3 | K4106 | N-Channel MOSFET, 2SK4106 2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm • • • • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max)  Toshiba data | | |
| 4 | K4107 | N-Channel MOSFET, 2SK4107 2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
○ Switching Regulator Applications
• • • • Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 8.5 S (  Toshiba Semiconductor data | | |
| 5 | K4108 | N-Channel MOSFET, 2SK4108 2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0. 21Ω (typ.) : |Yfs| = 14 S (typ Toshiba Semiconductor data | | |
| 6 | K4110 | N-Channel MOSFET, 2SK4110 2SK4110
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4110
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) E Toshiba data | | |
| 7 | K4111 | N-Channel MOSFET, 2SK4111 2SK4111
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4111
Switching Regulator Applications
Unit: mm
• • • •
Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (max) Toshiba data | |
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