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PDF KF12N60F Data sheet ( Hoja de datos )
| Número de pieza | KF12N60F | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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1. KF12N60F  Hay una vista previa y un enlace de descarga de KF12N60F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=12A
Drain-Source ON Resistance :
RDS(ON)=0.6 (Max) @VGS=10V
Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF12N60P KF12N60F
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
V
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
12 12*
7.4 7.4*
33 33*
450
17
4.5
215 49.8
1.72 0.4
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.58
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.51 /W
62.5 /W
KF12N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF12N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF12N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
2008. 10. 29
S
Revision No : 2
1/7
Free Datasheet http://www.datasheet4u.com/
1 page  
KF12N60P/F
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
(KF12N60P)
PDM
t1
t2
- Rth(j-c) = 0.58 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF12N60F)
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3
10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 0.51 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2008. 10. 29
Revision No : 2
5/7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF12N60F.PDF ] | |
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