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Número de pieza | SVD4N65T | |
Descripción | (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET | |
Fabricantes | Silan | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SVD4N65T (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SVD4N65T/SVD4N65F
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD4N65T/F is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
S-RinTM structure DMOS technology. The improved planar stripe
cell and the improved guarding ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,650V,RDS(on) typ =2.3Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
ORDERING SPECIFICATIONS
Part No.
SVD4N65T
SVD4N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVD4N65T
SVD4N65F
Shipping
50Unit/Tube
50Unit/Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Repetitive Avalanche Energy
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
EAS
EAR
TJ
Tstg
SVD4N65T
SVD4N65F
650
±30
4.0
16
100 33
0.8 0.26
240
10.6
-55 +150
-55 +150
Unit
V
V
A
A
W
W/°C
mJ
mJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2009.07.09
Page 1 of 7
Free Datasheet http://www.datasheet4u.net/
1 page SVD4N65T/SVD4N65F
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
as DUT
VGS
50
12V 200nF
300nF
10V
VDS
Qg
Qgs Qgd
VGS
3mA DUT
Charge
VDS
VGS
RG
10V
Resistive Switching Test Circuit & Waveform
RL
VDD
DUT
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
VDD
DUT
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2009.07.09
Page 5 of 7
Free Datasheet http://www.datasheet4u.net/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SVD4N65T.PDF ] |
Número de pieza | Descripción | Fabricantes |
SVD4N65F | (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET | Silan |
SVD4N65M | (SVD4N65T/F/M) 650V N-CHANNEL MOSFET | Silan |
SVD4N65T | (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET | Silan |
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