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Numéro de référence | K2368 | ||
Description | MOSFET ( Transistor ) - 2SK2368 | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS (on) = 0.5 Ω (VGS = 10 V, ID = 8.0 A)
2SK2368: RDS (on) = 0.6 Ω (VGS = 10 V, ID = 8.0 A)
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±15
A
Drain Current (pulse)*
ID (pulse) ±60
A
Total Power Dissipation (Tc = 25 ˚C) PT1 120 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 15 A
Single Avalanche Energy**
EAS 161 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4.7 MAX.
1.5
4
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
©
19954
Free Datasheet http://www.datasheet4u.net/
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Pages | Pages 8 | ||
Télécharger | [ K2368 ] |
No | Description détaillée | Fabricant |
K2362 | MOSFET ( Transistor ) - 2SK2362 | NEC |
K2364 | MOSFET ( Transistor ) - 2SK2364 | NEC |
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K2368 | MOSFET ( Transistor ) - 2SK2368 | NEC |
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