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D40N10-25 fiches techniques PDF

Vishay - SUD40N10-25

Numéro de référence D40N10-25
Description SUD40N10-25
Fabricant Vishay 
Logo Vishay 





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D40N10-25 fiche technique
New Product
SUD40N10-25
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.025 @ VGS = 10 V
100
0.028 @ VGS = 4.5 V
TO-252
ID (A)
40
38
D
GDS
Top View
Order Number:
SUD40N10-25
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
100
"20
40
23
70
40
40
80
33b
3a
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71140
S–00171—Rev. A, 14-Feb-00
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
Free Datasheet http://www.datasheet4u.net/

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