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Fairchild Semiconductor - 60A Field Stop IGBT

Numéro de référence FGA60N60UFD
Description 60A Field Stop IGBT
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FGA60N60UFD fiche technique
FGA60N60UFD
600 V, 60 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
120
60
180
298
119
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGA60N60UFD Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/

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