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PDF 9997GH-HF Data sheet ( Hoja de datos )

Número de pieza 9997GH-HF
Descripción AP9997GH-HF
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! 9997GH-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9997GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.The through-hole version (AP9997GJ) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
100V
120mΩ
11A
G
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
11
7
30
34.7
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Value
3.6
62.5
110
Units
V
V
A
A
A
W
W
Units
/W
/W
/W
Data and specifications subject to change without notice
1
201006022
Free Datasheet http://www.datasheet4u.net/

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