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PDF VUO121-16NO1 Data sheet ( Hoja de datos )
| Número de pieza | VUO121-16NO1 | |
| Descripción | Standard Rectifier Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO121-16NO1
VUO121-16NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
120 A
700 A
1-4
5-8
9 - 12
Features / Advantages:
● Package with DCB ceramic
● Reduced weight
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
13
16
14
17
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: E2-Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130507d
Free Datasheet http://www.datasheet4u.net/
1 page  
VUO121-16NO1
Rectifier
160
600
10000
120
IF
80
[A]
40
TVJ = 150°C
0
0.0 0.5 1.0
TVJ = 125°C
TVJ = 25°C
1.5 2.0
VF [V]
Fig. 1 Forward current vs.
voltage drop per diode
500
IFSM 400
[A]
300
TVJ = 45°C
TVJ = 150°C
50Hz, 80% VRRM
200
0.001
0.01
0.1
t [s]
1
Fig. 2 Surge overload current
vs. time per diode
1000
[A2s]
TVJ= 45°C
TVJ= 150°C
100
1
2 3 4 5 6 7 89
t [ms]
Fig. 3 I2t vs. time per diode
60
Ptot 40
DC =
1
0.5
0.4
0.33
0.17
0.08
[W]
20
RthA:
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0
0 10 20 30 40 50 0 25
IdAVM [A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
50 75 100 125 150 175
Tamb [°C]
0.8
140
120
100
IdAV 80
[A] 60
DC =
1
0.5
0.4
0.33
0.17
0.08
40
20
0
0 25 50 75 100 125 150 175
TC [°C]
Fig. 5 Max. forward current vs.
case temperature per diode
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Ri
0.080
0.003
0.160
0.160
0.247
ti
0.004
0.010
0.025
0.400
0.090
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130507d
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet VUO121-16NO1.PDF ] | |
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