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Numéro de référence | BLS6G2735LS-30 | ||
Description | S-band LDMOS transistor | ||
Fabricant | NXP Semiconductors | ||
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1 Page
BLS6G2735L-30;
BLS6G2735LS-30
S-band LDMOS transistor
Rev. 3 — 24 September 2012
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for S-band radar applications in the frequency range from
2.7 GHz to 3.5 GHz.
Table 1. Application information
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA.
Test signal
f
VDS
PL
Gp
D
(GHz)
(V)
(W) (dB) (%)
tr
(ns)
tf
(ns)
Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz
pulsed RF
3.1 to 3.5 32 30 13 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz
pulsed RF
2.7 to 3.3 32 35 14 50 20 10
Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz
pulsed RF
2.7 to 3.5 32 30 12 47 20 10
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.5 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz
Free Datasheet http://www.datasheetlist.com/
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Pages | Pages 17 | ||
Télécharger | [ BLS6G2735LS-30 ] |
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