PDF IXGX400N30A3 Data sheet ( Hoja de datos )

Número de pieza	IXGX400N30A3
Descripción	300V IGBTs
Fabricantes	IXYS
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No Preview Available ! GenX3TM 300V IGBTs Ultra-Low Vsat PT IGBTs for up to 10kHz Switching IXGK400N30A3 IXGX400N30A3 VCES = IC25 = VCE(sat) ≤ 300V 400A 1.15V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 300 V 300 V ±20 V Transient ±30 V TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 400 200 160 1200 ICM = 400 @ 0.8 • VCES 1000 -55 ... +150 150 A A A A A W °C °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C Mounting Torque ( IXGK ) Mounting Force ( IXGX ) 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 IC = 400A Characteristic Values Min. Typ. Max. 300 V 3.0 5.0 V 50 μA 2 mA ±400 nA 1.15 V 1.70 V G C EE Tab PLUS247TM (IXGX) G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features z Optimized for Low Conduction Losses z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits © 2009 IXYS CORPORATION, All Rights Reserved DS99584B(12/09) Free Datasheet http://www.datasheetlist.com/ 1 page Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature 56 54 RG = 1Ω , VGE = 15V VCE = 240V I C = 300A, 200A, 100A 52 50 48 46 44 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 130 120 110 100 90 80 70 60 50 40 30 1 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance t r td(on) - - - - TJ = 125ºC, VGE = 15V VCE = 240V I C = 200A, 100A 23456789 RG - Ohms 80 76 72 68 64 60 56 52 48 44 40 10 380 360 340 320 300 280 260 240 220 200 180 1 Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance t f td(off) - - - - TJ = 125ºC, VGE = 15V VCE = 240V I C = 200A, 300A I C = 100A 23456789 RG - Ohms 1100 1000 900 800 700 600 500 400 300 200 100 10 IXGK400N30A3 IXGX400N30A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current 56 54 52 RG = 1Ω , VGE = 15V VCE = 240V 50 TJ = 125ºC 48 TJ = 25ºC 46 44 100 120 140 160 180 200 220 240 260 280 300 IC - Amperes Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 400 350 t f td(off) - - - - RG = 1Ω, VGE = 15V VCE = 240V 300 250 240 230 250 200 I C = 300A, 200A, 100A 220 210 150 200 100 190 50 180 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Switching Times vs. Collector Current 350 240 300 t f td(off) - - - - 230 RG = 1Ω, VGE = 15V VCE = 240V 250 220 TJ = 125ºC 200 210 150 TJ = 25ºC 100 200 190 50 180 100 120 140 160 180 200 220 240 260 280 300 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_400N30A3(96)11-18-08-A Free Datasheet http://www.datasheetlist.com/ 5 Page

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