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PDF NTGD3147F Data sheet ( Hoja de datos )
| Número de pieza | NTGD3147F | |
| Descripción | Power MOSFET and Schottky Diode | |
| Fabricantes | ON Semiconductor | |
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NTGD3147F
Power MOSFET and
Schottky Diode
−20 V, −2.5 A, P−Channel with Schottky
Barrier Diode, TSOP−6
Features
• Fast Switching
• Low Gate Change
• Low RDS(on)
• Low VF Schottky Diode
• Independently Connected Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t≤ 5 s
Steady State
t≤ 5 s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
IDM
TJ, TSTG
−20
±12
−2.2
−1.6
−2.5
1.0
1.3
−7.5
−25 to
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS −0.8
TL 260
Unit
V
V
A
W
A
°C
A
°C
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM 20 V
VR 20 V
Average Rectified Forward Current
IF 1 A
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady−State (Note 1) RqJA
125 °C/W
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
100 °C/W
Junction−to−Ambient Steady−State (Note 2)
RqJA
235 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm2 [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
http://onsemi.com
P−CHANNEL MOSFET
V(BR)DSS
RDS(on) Max
ID Max
−20 V
145 mW @ −4.5 V
200 mW @ −2.5 V
−2.2 A
−1.6 A
VR Max
20 V
SCHOTTKY DIODE
VF Max
0.45 V
IF Max
1.0 A
DA
G
S
P−Channel MOSFET
K
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TC MG
G
1
TC = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A1
S2
6K
5 N/C
G3
4D
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTGD3147F/D
Free Datasheet http://www.datasheetlist.com/
1 page  
NTGD3147F
TYPICAL PERFORMANCE CHARACTERISTICS
5
QT
4
12
10
−VDS
3
−VGS
8
QGS
2
QDS
6
4
1
VDS = −10 V
ID = −2.2 A
2
TJ = 25°C
00
01234
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
10
VGS = 0 V
1 TJ = 150°C
0.1
0.4
125°C 25°C −55°C
0.5 0.6 0.7 0.8 0.9 1.0 1.1
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage versus
Current
1.2
40
100
VGS = −4.5 V
VDD = −10 V
ID = −1.0 A
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time
Variation versus Gate Resistance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
−50
ID = −250 mA
−25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage
150
10
30
20
10
0
0.001
0.01 0.1 1 10
SINGLE PULSE TIME (s)
100 1000
Figure 11. Single Pulse Maximum Power
Dissipation
1 ms
1
10 ms
VGS = −12 V
0.1 Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
dc
10 100
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
Free Datasheet http://www.datasheetlist.com/
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| PDF Descargar | [ Datasheet NTGD3147F.PDF ] | |
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