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C3D08060G fiches techniques PDF

Cree - Silicon Carbide Schottky Diode

Numéro de référence C3D08060G
Description Silicon Carbide Schottky Diode
Fabricant Cree 
Logo Cree 





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C3D08060G fiche technique
C3D08060G
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Automotive Qualified to AEC-Q101
Applications
Switch Mode Power Supplies
Power Factor Correction
- Typical PFC Pout : 800W-1600W
Motor Drives
- Typical Power : 3HP-4HP
Package
VRRM = 600 V
IF (TC=135˚C) = 11 A
Qc = 21 nC
TO-263-2
PIN 1
PIN 2
CASE
Part Number
C3D08060G
Package
TO-263-2
Marking
C3D08060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
600
600
600
24
11
8
57
36
80
60
220
107
46
-55 to
+175
V
V
V
TC=25˚C
A TC=135˚C
TC=152˚C
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A
TC=25˚C, tp = 10 mS, Half Sine Wave, D=0.3
TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A TC=25˚C, tP = 10 µs, Pulse
W
TC=25˚C
TC=110˚C
˚C
Note
1 C3D08060G Rev. E
Free Datasheet http://www.nDatasheet.com

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