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PDF H30T100 Data sheet ( Hoja de datos )
| Número de pieza | H30T100 | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
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Soft Switching Series
IHW30N100T
q
Low Loss DuoPack : IGBT in TrenchStop®and Fieldstop technology
with anti-parallel diode
Features:
• 1.1V Forward voltage of antiparallel rectifier diode
• Specified for TJmax = 175°C
• TrenchStop® and Fieldstop technology for 1000 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
G
PG-TO-247-3
C
E
Applications:
• Microwave Oven
• Soft Switching Applications
Type
VCE
IHW30N100T 1000V
IC
30A
VCE(sat),Tj=25°C
1.55V
Tj,max Marking
175°C H30T100
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE ≤ 1000V, Tj ≤ 175°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1000
60
30
90
90
22
12
36
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com
1 page  
Soft Switching Series
IHW30N100T
q
100A
80A
60A
40A
VGE=20V
15V
13V
11V
9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
100A
80A VGE=20V
15V
60A 13V
11V
40A 9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
100A
80A
60A
40A
TJ=175°C
20A
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=80A
2.0V
1.5V
1.0V
IC=40A
IC=20A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com
5 Page 
Soft Switching Series
IHW30N100T
q
i,v
diF /dt
I
F
I
rrm
tr r =tS +tF
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
11
Rev. 2.7 Nov 08
Free Datasheet http://www.nDatasheet.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet H30T100.PDF ] | |
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