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PDF UP0487CG Data sheet ( Hoja de datos )
| Número de pieza | UP0487CG | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Composite Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0487CG
Silicon N-channel MOSFET
For switching circuits
Features
High-speed switching
Incorporating a built-in gate protection-diode
Two elements incorporated into one package (Each transistor is separated)
SSMini type package, reduction of the mounting area and assembly cost
Basic Part Number
2SK3937 × 2
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
Gate-source surrender voltage
VDSS
VGSS
Drain current
ID
Peak drain current
IDP
Total power dissipation
PT
Channel temperature
Tch
Storage temperature
Tstg
Rating
20
±12
100
200
125
125
–55 to +125
Unit
V
V
mA
mA
mW
°C
°C
Package
Code
SSMini6-F2
Pin Name
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
Marking Symbol: 2V
Internal Connection
654
123
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Short-circuit input capacitance
(Common source)
VDSS
IDSS
IGSS
VTH
RDS(on)
Yfs
ID = 10 mA, VGS = 0
VDS = 10 V, VGS = 0
VGS = ±10 V, VDS = 0
ID = 50 mA, VDS = 5.0 V
ID = 1 mA, VGS = 1.8 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3 V,
Ciss
Short-circuit output capacitance
(Common source)
Coss VDS = 3 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance
(Common source)
Turn-on time *
Turn-off time *
Crss
ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA
toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA
Min
20
0.4
20
Typ Max
1.0
±10
1.3
6 13
46
34
55
10
13
5
250
480
Unit
V
mA
mA
V
W
mS
pF
pF
pF
ns
ns
Publication date: October 2007
SJJ00394AED
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet UP0487CG.PDF ] | |
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