|
|
PDF YMP230N55 Data sheet ( Hoja de datos )
| Número de pieza | YMP230N55 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | YM | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de YMP230N55 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
YMP230N55
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP230N55 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
55
2
3
230
V
mΩ
mΩ
A
Features
● VDS=55V；ID=230A@ VGS =10V；
RDS(ON)< 3 mΩ @ VGS =10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP230N55
YMP230N55
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=28V,VG=10V,L= 1mH ,R g=25Ω;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
55
±25
230
170
900
300
1.33
2000
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
1/6
Free Datasheet http://www.0PDF.com
1 page  
Typical Characteristics (Cont.)
Output Characteristics
225
200
175
150
125
100
75
50
25
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
YMP230N55
Drain-Source On Resistance
6
5
4
3
2
1
ID - Drain Current (A)
Gate Threshold Voltage
7
6
5
4
3
2
1
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
5/6
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet YMP230N55.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| YMP230N55 | N-Channel Enhancement Mode Power MOSFET | YM |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |