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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDPF51N25
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDPF51N25 fiche technique
FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Features
• RDS(on) = 48 mΩ(Typ.) @ VGS = 10 V, ID = 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low Crss (Typ. 63 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
March 2016
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
DD
GDS
TO-220 GDS
G
S
TO-220F
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP51N25
G
TO-220F
LG-formed
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25° C)
- Continuous (TC = 100° C)
- Pulsed
(Note 1)
250
51 51*
30 30*
204 204*
VGSS
EAS
IAR
EAR
VISO
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=0.3sec; TC = 25° C)
Peak Diode Recovery dv/dt
(Note 3)
± 30
1111
51
32
N/A 2500
4.5
PD Power Dissipation (TC = 25°C)
320 38
- Derate Above 25°C 3.7 0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
S
Unit
V
A
A
A
V
mJ
A
mJ
V
V/ns
W
W/° C
°C
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25
FDPF51N25YDTU
FDPF51N25RDTU
3.3
62.5
Unit
° C/W
° C/W
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
1
www.fairchildsemi.com

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