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PDF IRF6617PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6617PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD -97082
IRF6617PbF
IRF6617TRPbF
DirectFET Power MOSFET
VDSS
30V
RDS(on) max Qg(typ.)
8.1mΩ@VGS = 10V
10.3mΩ@VGS = 4.5V
11nC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
ST
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for param-
eters that are critical in synchronous buck converters including RDS(on) and gate charge to minimize losses in the control FET
sAobckseot.lute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
iContinuous Drain Current, VGS @ 10V
ÃfContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
iPower Dissipation
fPower Dissipation
fPower Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Linear Derating Factor
30
±20
55
14
11
120
42
2.1
1.4
27
12
0.017
V
A
W
mJ
A
W/°C
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-40 to + 150
°C
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Notes through are on page 2
www.irf.com
1
5/3/06
Free Datasheet http://www.Datasheet4U.com
1 page  
24
ID = 15A
20
16
12 TJ = 125°C
8
4
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 15a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 16a. Gate Charge Test Circuit
www.irf.com
IRF6617PbF
120
ID
100
TOP 5.2A
7.9A
BOTTOM 12A
80
60
40
20
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 13. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16b. Gate Charge Waveform
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6617PBF.PDF ] | |
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