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IRF6620PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF6620PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6620PBF fiche technique
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97092
IRF6620PbF
IRF6620TRPbF
DirectFET™ Power MOSFET ‚
VDSS RDS(on) max Qg(typ.)
20V 2.7m@VGS = 10V 28nC
3.6m@VGS = 4.5V
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
MX
DirectFET™ ISOMETRIC
Description
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6620PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6620PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 70°C
PD @TA = 25°C
EAS
IAR
Gate-to-Source Voltage
kContinuous Drain Current, VGS @ 10V
ÃhContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
kPower Dissipation
hPower Dissipation
hPower Dissipation
fSingle Pulse Avalanche Energy
ÃgAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
Max.
20
±20
150
27
22
220
89
1.8
2.8
39
22
0.017
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
Notes  through Š are on page 2
www.irf.com
1
5/11/06
Free Datasheet http://www.Datasheet4U.com

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