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Numéro de référence | IRF6691TRPBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
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1 Page
PROVISIONAL
PD - 97204
IRF6691PbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
IRF6691TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
47nC 15nC 4.4nC 26nC 30nC 2.0V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MT
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
20
±12
32
26
180 j
260
230
26
V
A
mJ
A
10
9
8
ID = 32A
7
6
5
4
3 TJ = 125°C
2
1 TJ = 25°C
0
2 3 4 5 6 7 8 9 10
6.0
5.0 ID= 17A
4.0
VDS= 16V
VDS= 10V
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.72mH, RG = 25Ω, IAS = 26A.
1
05/18/06Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 10 | ||
Télécharger | [ IRF6691TRPBF ] |
No | Description détaillée | Fabricant |
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