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PDF IRF6894MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6894MPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97633A
IRF6894MPbF
IRF6894MTRPbF
DirectFET®plus MOSFET with Schottky Diode
l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Low Package Inductance
l Optimized for High Frequency Switching
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
26nC 9.8nC 2.8nC 56nC 31nC 1.6V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
l Footprint compatible to DirectFET™
MX
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
32
25
160
260
410
26
Units
V
A
mJ
A
4.0 14.0
3.0
ID = 33A
12.0 ID= 26A
10.0
VDS= 20V
VDS= 13V
2.0 TJ = 125°C
8.0 VDS= 5V
6.0
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.18mH, RG = 50Ω, IAS = 26A.
1
8/12/11Free Datasheet http://www.Datasheet4U.com
1 page  
1000
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
1
0.1 0.4 0.7 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1600
1200
800
10000
1000
IRF6894MTRPbF
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10msec
100μsec
1msec
10
1
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
DC
1 10
100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
2.0 ID = 10mA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.9A
2.7A
BOTTOM 26A
400
www.irf.com
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6894MPBF.PDF ] | |
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