|
|
Numéro de référence | IRF6892STRPBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 97770
IRF6892STRPbF
IRF6892STR1PbF
DirectFET®plus MOSFET with Schottky Diode
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Ultra Low Package Inductance
25V max ±16V max 1.3mΩ @ 10V 2.0mΩ @ 4.5V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
l Optimized for Control FET Application
17nC 6.0nC 2.3nC 39nC 16nC 1.8V
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
GS
DS
SD
Applicable DirectFET Outline and Substrate Outline
S3C
ISOMETRIC
S1 S2 S3C
M2 M4
L4 L6 L8
Description
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25
±16
V
28
22
125
A
220
240 mJ
22 A
8.0 14.0
6.0
ID = 28A
12.0
10.0
ID= 22A
VDS= 20V
VDS= 13V
4.0 8.0 VDS= 5V
6.0
2.0 TJ = 125°C
4.0
0.0
2
TJ = 25°C
468
10 12 14 16
2.0
0.0
0
10 20 30 40 50
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A.
1
4/4/12
Free Datasheet http://www.Datasheet4U.com
|
|||
Pages | Pages 9 | ||
Télécharger | [ IRF6892STRPBF ] |
No | Description détaillée | Fabricant |
IRF6892STRPBF | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |