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2SA1020 fiches techniques PDF

LZG - SILICON PNP TRANSISTOR

Numéro de référence 2SA1020
Description SILICON PNP TRANSISTOR
Fabricant LZG 
Logo LZG 





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2SA1020 fiche technique
2SA1020(3CG1020)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于功率放大,电源开关/Purpose: Power amplifier and switching applications.
特点:饱和压降低,开关时间短,与 2SC2655(3DG2655)互补/Features: Low collector saturation
voltage high speed switching time, complementary pair with 2SC2655(3DG2655).
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
Unit
VCBO -50 V
VCEO -50 V
VEBO
-5.0
V
IC
-2.0
A
PC 900 mW
Tj 150 ℃
Tstg -55~150 ℃
电性能参数/Electrical characteristics(Ta=25℃)
参数符号
Symbol
测试条件
Test condition
VCEO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tf
ton
tstg
IC=-10mA
VCB=-50V
VEB=-5.0V
VCE=-2.0V
VCE=-2.0V
IC=-1.0A
IC=-1.0A
VCE=-2.0V
VCB=-10V
(如图示)
(如图示)
(如图示)
IB=0
IE=0
IC=0
IC=-0.5A
IC=-1.5A
IB=-0.05A
IB=-0.05A
IC=-0.5A
IE=0 f=1.0MHz
最小值
Min
-50
70
40
50
数值
Rating
典型值
Typ
100
0.1
0.1
1.0
h 分档/FE(1)
hFE(1)
classifications:
O:70~140
Y:120~240
最大值
Max
-1.0
-1.0
240
-0.5
-1.2
40
单位
Unit
V
μA
μA
V
V
MHz
pF
μs
μs
μs
http://www.lzg.so
Free Datasheet http://www.Datasheet4U.com

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